IBM11T2640HP-70T datasheet, PDF

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IBM11T2640HP-70T: DescriptionFast Page DRAM Module, 2MX64, 70ns, CMOS, DIMM-144; Categorystorage storage; File Size269KB，28 Pages; ManufacturerIBM; Websitehttp://www.ibm.com

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IBM11T2640HP-70T Overview

Fast Page DRAM Module, 2MX64, 70ns, CMOS, DIMM-144

IBM11T2640HP-70T Parametric

Parameter Name	Attribute value
Maker	IBM
Parts packaging code	DIMM
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	134217728 bit
Memory IC Type	FAST PAGE DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	2048
self refresh	YES
Maximum standby current	0.0017 A
Maximum slew rate	0.64 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL

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IBM0118180M 1M x 1810/10, 5.0V, LP, SR. IBM0118180P1M x 1810/10, 3.3V, LP, SR.

IBM11T2640HP

2M x 64 144 PIN SO DIMM

Features

• 144 Pin JEDEC Standard, 8 Byte Small Outline

Dual In-line Memory Module with 8 Byte busses

• Performance:

-60

RAC

CAC

RAS Access Time

CAS Access Time

Access Time From Address

Cycle Time

Page Mode Cycle Time

60ns

15ns

30ns

110ns

40ns

-70

70ns

20ns

35ns

130ns

45ns

• Au contacts

• Optimized for byte-write non-parity applications

• System Performance Beneﬁts:

- Reduced noise (18 V

/18V

pins)

- Byte write, byte read accesses

- Serial PDs

• Fast Page Mode, Read-Modify-Write Cycles

• Refresh Modes: RAS-Only, CBR Hidden

Refresh, and Self Refresh

• 2048 refresh cycles distributed across 256ms

• 11/10 addressing (Row/Column)

• Card size: 2.66" x 1.0" x 0.149"

• DRAMS in TSOP Package

• All inputs and outputs are LVTTL (3.3V) compat-

ible

• Single 3.3V

0.3V Power Supply

Description

IBM11T2640HP is an industry standard 144-pin

8-byte Small Outline Dual In-line Memory Module

(SO DIMM) which is organized as a 2Mx64 high

speed memory array designed for use in non-parity

applications. The SO DIMM uses 8 2Mx8 DRAMs in

TSOP packages.

This card uses

serial presence detects

implemented

via a serial EEPROM using the two pin I

C Protocol.

This communication protocol uses CLOCK (SCL)

and DATA I/O (SDA) lines to synchronously clock

data between the master (ex: The System Micropro-

cessor) and the slave EEPROM device. The device

address for the EEPROM is set to zero at the card.

The first 128 bytes are utilized by the SODIMM man-

ufacturer and the second 128 bytes are available to

the end user.

All IBM 144-pin SO DIMMs provide a high perfor-

mance, flexible 8-byte interface in a 2.66” long

space-saving footprint. Related products are the

2Mx64 Fast Page Mode and the 1Mx64, 2Mx64,

4Mx64 and the x72 (ECC) EDO SO DIMMs.

Card Outline

(Front)

(Back)

59 61

60 62

143

144

50H8016

SA14-4466-01

Revised 4/96

Use is further subject to the provisions at the end of this document.

Page 1 of 27

IBM11T2640HP-70T Related Products

	IBM11T2640HP-70T	IBM11T2640HP-60T
Description	Fast Page DRAM Module, 2MX64, 70ns, CMOS, DIMM-144	Fast Page DRAM Module, 2MX64, 60ns, CMOS, DIMM-144
Maker	IBM	IBM
Parts packaging code	DIMM	DIMM
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
access mode	FAST PAGE	FAST PAGE
Maximum access time	70 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144
memory density	134217728 bit	134217728 bit
Memory IC Type	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE
memory width	64	64
Number of functions	1	1
Number of ports	1	1
Number of terminals	144	144
word count	2097152 words	2097152 words
character code	2000000	2000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	2MX64	2MX64
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
refresh cycle	2048	2048
self refresh	YES	YES
Maximum standby current	0.0017 A	0.0017 A
Maximum slew rate	0.64 mA	0.72 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL

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