FQU3N40TU datasheet, PDF - EEWORLD Datasheet

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FQU3N40TU: Description2A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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FQU3N40TU Overview

2A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

FQU3N40TU Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	Rochester Electronics
Parts packaging code	TO-251
package instruction	IPAK-3
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	120 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	3.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	NOT APPLICABLE
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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