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BC817

Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size46KB,2 Pages
ManufacturerRectron
Environmental Compliance  
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BC817 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BC817 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC817
TECHNICAL SPECIFICATION
NPN Silicon Planar Epitaxial Transistor
Dimensions SOT-23
1
2
3
BASE
EMITTER
COLLECTOR
Absolute Maximun Ratings (
Ta=25
o
C unless specified otherwise
)
Desription
Collector-Emitter Voltage
(V
BE
= 0V)
Collector Emitter Voltage (open base)
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - (DC)
Base Current - Peak
Total Power Dissipation up to T
amb
= 25 °C
Storage Temperature
Junction Temperature
I
C
= 10mA
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
(-I
EM
)
I
B
I
BM
P
tot
T
stg
T
J
VALUE
50
45
5
500
1000
1000
100
200
250
(-55 to +150)
150
UNITS
V
V
V
mA
mA
mA
mA
mA
mW
°
C
°
C
Thermal Resistance
From junction to ambient
R
th(j-a)
500
k/W

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