VISHAY
BCW69 / BCW70
Vishay Semiconductors
Small Signal Transistor (PNP)
Features
•
•
•
•
PNP Silicon Epitaxial Planar Transistors
Suited for low level, general purpose applications.
Low current, low voltage.
As complementary types, BCW71 and BCW72
NPN transistors are recommended.
3
18822
2
1
1
B
C 3
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
E 2
Parts Table
Part
BCW69
BCW70
Type differentiation
h
FE
, 120 to 260 @ 2 mA
h
FE
, 215 to 500 @ 2 mA
Ordering code
BCW69-GS18 or BCW69-GS08
BCW70-GS18 or BCW70-GS08
H1
H2
Marking
Remarks
Tape and reel
Tape and reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - base voltage
Collector - emitter voltage
Emitter - base voltage
Collector current
Peak collector current
Peak base current
Power dissipation
Test condition
Symbol
- V
CBO
- V
CEO
- V
EBO
- I
C
- I
CM
- I
BM
P
tot
Value
50
45
5.0
100
200
200
250
Unit
V
V
V
mA
mA
mA
mW
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
STG
Value
500
1)
Unit
°C/W
°C
°C
150
- 65 to + 150
Mounted on FR-4 printed-circuit board.
Document Number 85138
Rev. 1.2, 17-May-04
www.vishay.com
1
BCW69 / BCW70
Vishay Semiconductors
Electrical DC Characteristics
Parameter
DC current gain
Test condition
- V
CE
= 5 V, - I
C
= 10
µA
- V
CE
= 5 V, - I
C
= 2 mA
Collector - emitter saturation
voltage
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 50 mA, - I
B
= 2.5 mA
Base - emitter saturation voltage - I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 50 mA, - I
B
= 2.5 mA
Base - emiter voltage
Collector cut - off current
- V
CE
= 5 V, - I
C
= 2 mA
- V
CB
= 20 V, V
EB
= 0
- V
CB
= 20 V, V
EB
= 0,
T
A
= 100 °C
Part
BCW69
BCW70
BCW69
BCW70
Symbol
h
FE
h
FE
h
FE
h
FE
- V
CEsat
- V
CEsat
- V
BEsat
- V
BEsat
- V
BE
- I
CBO
- I
CBO
600
120
215
80
150
720
810
750
100
10
Min
Typ
90
150
260
500
300
Max
VISHAY
Unit
mV
mV
mV
mV
mV
nA
µA
Electrical AC Characteristics
Parameter
Gain - bandwidth product
Collector - base capacitance
Noise figure
Test condition
- V
CE
= 5 V, - I
C
= 10 mA,
f = 100 MHz
- V
CB
= 10 V, f = 1 MHz, I
E
= 0
- V
CE
= 5 V, - I
C
= 200
µA,
R
S
= 2 kΩ f = 100 kHz,
B = 200 Hz
Symbol
f
T
C
CBO
F
Min
100
4.5
2
6
Typ
Max
Unit
MHz
pF
dB
Package Dimensions in mm (Inches)
1.15 (.045)
0.175 (.007)
0.125 (.005)
0.1 (.004) max.
0.4 (.016)
0.4 (.016)
2.6 (.102)
2.4 (.094)
0.95 (.037)
ISO Method E
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
1.43 (.056)
1.33 (.052)
Mounting Pad Layout
0.8 (0.031)
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
www.vishay.com
2
Document Number 85138
Rev. 1.2, 17-May-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
BCW69 / BCW70
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85138
Rev. 1.2, 17-May-04
www.vishay.com
3
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