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BC847W

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size425KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

BC847W Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

BC847W Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC846W
BC847W
BC848W
NPN
General Purpose
Transistors
SOT-323
A
D
Features
Low current (max. 100mA)
Low voltage (max. 65V)
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Maximum Ratings
Operating temperature : -65℃ to +150℃
Storage temperature : -65℃ to +150℃
Thermal resistance from junction to ambient*: 625K/W
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-10mAdc, I
B
=0)
BC846W
BC847W
BC848W
Collector-Base Breakdown Voltage
(I
C
=-100µAdc, I
E
=0)
BC846W
BC847W
BC848W
Collector-Emitter Breakdown Voltage
(I
E
=-10µAdc, I
C
=0)
BC846W, BC847W
BC848W
Collector Current (DC)
Peak Collector Current
Peak Base Current
Min
Max
Units
Vdc
---
---
---
80
50
30
Vdc
G
H
J
F
E
Electrical Characteristics @ 25℃ Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CEO
B
C
C
B
E
V
(BR)CBO
---
---
---
65
45
30
Vdc
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
V
(BR)EBO
I
C
I
CM
I
BM
---
---
---
---
---
6
5
100
200
200
mAdc
mAdc
µAdc
* Transistor mounted on an FR4 printed-circuit board
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
Suggested Solder
Pad Layout
0.70
0.90
1.90
0.65
0.65
Revision: 2
www.mccsemi.com
1 of 3
2006/05/26

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