BC850CT/R datasheet, PDF - EEWORLD Datasheet

BC850CT/R: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size154KB，4 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/; Environmental Compliance

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BC850CT/R Overview

Transistor

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	420
JESD-609 code	e3
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Terminal surface	Matte Tin (Sn)
Nominal transition frequency (fT)	100 MHz

	BC850CT/R	BC849BT/R	BC850BT/R
Description	Transistor	Transistor	Transistor
Is it Rohs certified?	conform to	conform to	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	420	200	200
JESD-609 code	e3	e3	e3
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
surface mount	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

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