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BC517_D74Z

Description
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size209KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BC517_D74Z Overview

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

BC517_D74Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time41 weeks 3 days
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage30 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)30000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
BC517 — NPN Darlington Transistor
September 2015
BC517
NPN Darlington Transistor
Features
• This device is designed for applications requiring extremely
high current gain at currents to 1.0 A.
• Sourced from process 05.
TO-92
12
1
1. Collector
2. Base
3. Emitter
3
3
2
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC517_D74Z
Top Mark
BC517
Package
TO-92 3L (Bent Lead)
Packing Method
Ammo
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Parameter
Value
30
40
10
1.2
-55 to +150
Unit
V
V
V
A
°C
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2005 Fairchild Semiconductor Corporation
BC517 Rev. 1.1
www.fairchildsemi.com
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