MIG75J7CSB1W datasheet, PDF - EEWORLD Datasheet

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MIG75J7CSB1W: DescriptionInsulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES; CategoryDiscrete semiconductor The transistor; File Size220KB，10 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MIG75J7CSB1W Overview

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES

MIG75J7CSB1W Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	75 A
Collector-emitter maximum voltage	600 V
Number of components	1
Maximum operating temperature	100 °C
VCEsat-Max	2.2 V

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MIG75J7CSB1W

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

MIG75J7CSB1W

(600V/75A 7in1)

High Power Switching Applications

Motor Control Applications

•

Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against

short-circuit current, over-current, under-voltage and over-temperature) into a single package.

The electrodes are isolated from the case

Low thermal resistance

CE (sat)

= 1.8 V (typ.)

UL recognized: File No.E87989

Weight: 278 g (typ.)

Equivalent Circuit

12 11 10

IN V

GND

IN V

GND

IN V

GND

IN V

GND

GND IN FO V

GND V

OUT

GND V

OUT

GND V

OUT

GND V

OUT

GND V

OUT

GND V

OUT

GND V

OUT

15.

(U)

GND (V)

Open

16.

FO (U)

(W)

IN (B)

10.

17.

IN (U)

FO (W)

IN (X)

11.

18.

GND (U)

IN (W)

IN (Y)

12.

19.

(V)

GND (W)

IN (Z)

13.

20.

FO (V)

(L)

GND (L)

14.

IN (V)

FO (L)

2004-10-01

1/10

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