BCW29LT1 datasheet, PDF - EEWORLD Datasheet

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BCW29LT1: Description100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size499KB，26 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BCW29LT1 Overview

100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN

BCW29LT1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	CASE 318-08
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors

PNP Silicon

COLLECTOR

BASE

EMITTER

BCW29LT1

BCW30LT1

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current – Continuous

Symbol

VCEO

VCBO

VEBO

Value

–32

–5.0

–100

Unit

Vdc

mAdc

CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR-5 Board (1)

TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

Max

225

1.8

θJA

556

300

2.4

θJA

TJ, Tstg

417

– 55 to +150

Unit

mW/°C

°C/W

mW/°C

°C/W

°C

DEVICE MARKING

BCW29LT1 = C1; BCW30LT1 = C2

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –2.0 mAdc, IE = 0)

Collector–Emitter Breakdown Voltage

(IC = –100

µAdc,

VEB = 0)

Collector–Base Breakdown Voltage

(IC = –10

µAdc,

IC = 0)

Emitter–Base Breakdown Voltage

(IE = –10

µAdc,

IC = 0)

Collector Cutoff Current

(VCB = –32 Vdc, IE = 0)

(VCB = –32 Vdc, IE = 0, TA = 100°C)

1. FR– 5 = 1.0

0.75

2. Alumina = 0.4

0.3

V(BR)CEO

V(BR)CES

V(BR)CBO

V(BR)EBO

ICBO

—

–100

–10

nAdc

µAdc

–32

–5.0

—

Vdc

0.062 in.

0.024 in. 99.5% alumina.

2–174

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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