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BZD27C43P

Description
Zener Diode, 43V V(Z), 6.98%, 0.8W, Silicon, Unidirectional, DO-219AA, LEAD FREE, PLASTIC, CASE M1F, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size1MB,3 Pages
ManufacturerFagor Electrónica
Environmental Compliance  
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BZD27C43P Overview

Zener Diode, 43V V(Z), 6.98%, 0.8W, Silicon, Unidirectional, DO-219AA, LEAD FREE, PLASTIC, CASE M1F, SMA, 2 PIN

BZD27C43P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFagor Electrónica
Parts packaging codeDO-219AA
package instructionLEAD FREE, PLASTIC, CASE M1F, SMA, 2 PIN
Contacts2
Manufacturer packaging codeCASE M1F
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-219AA
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.8 W
Certification statusNot Qualified
Nominal reference voltage43 V
surface mountYES
technologyZENER
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.98%
Working test current10 mA
BZD27C Series
0.8 W Surface Mount Glass Passivated Zener Diode
Dimensions in mm.
CASE:
M1F (DO219AA)
Voltage
11 to 240 V
Power
0.8 W
R
• Silicon planar zener diodes
• Low profile surface-mount package
• Zener and surge curren specification
• Low leakage curren
• Excellent stability
• High temperature soldering:
260 °C / 10 seconds at terminals
MECHANICAL DATA
• Case: Sub SMA Plastic
Terminal: Pure tin plated lead free.
Packaging method: refer to package code
Marking code: as table
Weight: 10 mg (approx.)
XXX = Marking code
WW = Week code
Y = Year code
Maximun Ratings and Electrical Characteristics at 25 °C
SYMBOL
TYPE NUMBER
Forward Voltage
Power Dissipation
@ IF = 0.2A
TL = 80 °C
TA = 25 °C (Note 1)
Value
Unit
V
F
Ptot
P
ZSM
1.2
2.3
0.8
300
V
W
W
Non-Repetitive Peak Pulse Power Dissipation
100 µs square pulse (Note 2)
Non-Repetitive Peak Pulse Power Dissipation
10/1000 µs waveform (BZD27-C7V5P to BZD27-C100P)
(Note 2)
Non-Repetitive Peak Pulse Power Dissipation
P
RSM
150
W
P
RSM
R.
JA
R.
JL
T
j
- T
stg
Notes:
10/1000 µs waveform (BZD27-110P to BZD27-C200P)
(Note 2)
100
180
30
-65 to + 175
W
K /W
K /W
°C
Thermal Resistance Junction to Ambient Air
(Note 1)
Thermal Resistance Junction to lead
Operating and Storage Temperature Range
µmthick)
1.Mounted on Epoxy-Glass PCB with 3 x 3 mm Cu pads (
≥40
2. T
j
= 25
°C
Prior to surge
.
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