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BC856BDW1T1,
BC857BDW1T1 Series,
BC858CDW1T1 Series
Preferred Devices
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
(3)
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(2)
(1)
Q
1
Q
2
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
BC856
BC857
BC858
Collector −Base Voltage
BC856
BC857
BC858
Emitter −Base Voltage
Collector Current −Continuous
V
EBO
I
C
V
CBO
−80
−50
−30
−5.0
−100
V
mAdc
Symbol
V
CEO
−65
−45
−30
V
Value
Unit
V
(4)
(5)
(6)
1
SOT−363/SC−88
CASE 419B
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation Per Device
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Range
Symbol
P
D
Max
380
250
3.0
R
qJA
T
J
, T
stg
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
3x M
G
G
= Specific Device Code
x = B, F, G, or L
(See Ordering Information)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
3x
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 6
Publication Order Number:
BC856BDW1T1/D
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mA)
V
(BR)CEO
BC856 Series
BC857 Series
BC858 Series
V
(BR)CES
BC856 Series
BC857B Only
BC858 Series
V
(BR)CBO
BC856 Series
BC857 Series
BC858 Series
V
(BR)EBO
BC856 Series
BC857 Series
BC858 Series
I
CBO
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−15
−4.0
nA
mA
−80
−50
−30
−
−
−
−
−
−
V
−80
−50
−30
−
−
−
−
−
−
V
−65
−45
−30
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(I
C
= −10
mA,
V
EB
= 0)
Collector −Base Breakdown Voltage
(I
C
= −10
mA)
Emitter −Base Breakdown Voltage
(I
E
= −1.0
mA)
Collector Cutoff Current (V
CB
= −30 V)
Collector Cutoff Current
(V
CB
= −30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10
mA,
V
CE
= −5.0 V)
h
FE
BC856B, BC857B
BC857C, BC858C
BC856B, BC857B
BC857C, BC858C
V
CE(sat)
−
−
V
BE(sat)
−
−
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
−0.7
−0.9
−
−
−
−
−0.3
−0.65
−
−
220
420
150
270
290
520
−
−
475
800
−
(I
C
= −2.0 mA, V
CE
= −5.0 V)
Collector −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
V
V
V
f
T
C
ob
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
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BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
TYPICAL CHARACTERISTICS − BC856
−1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= −5.0 V
T
A
= 25°C
2.0
1.0
0.5
0.2
−0.1 −0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
−0.8
V
BE(sat)
@ I
C
/I
B
= 10
−0.6
V
BE
@ V
CE
= −5.0 V
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
−0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. “On” Voltage
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−2.0
−1.0
−1.6
I
C
=
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−1.4
−1.2
−1.8
q
VB
for V
BE
−55°C to 125°C
−0.8
−2.2
−0.4
T
J
= 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
I
B
, BASE CURRENT (mA)
−5.0
−10
−20
−2.6
−3.0
−0.2
−0.5 −1.0
−50
−2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mA)
−100 −200
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
f T, CURRENT−GAIN − BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= −5.0 V
200
100
50
20
−100
−1.0
−10
I
C
, COLLECTOR CURRENT (mA)
10
8.0
6.0
4.0
2.0
−0.1 −0.2
C
ob
−0.5
−1.0 −2.0
−5.0 −10 −20
V
R
, REVERSE VOLTAGE (VOLTS)
−50 −100
Figure 5. Capacitance
Figure 6. Current−Gain − Bandwidth Product
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3
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
TYPICAL CHARACTERISTICS − BC857/BC858
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= −10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
I
C
, COLLECTOR CURRENT (mAdc)
−100 −200
0
−0.1 −0.2
V
CE(sat)
@ I
C
/I
B
= 10
−0.5 −1.0 −2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mAdc)
−50
−100
V
BE(on)
@ V
CE
= −10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
Figure 7. Normalized DC Current Gain
Figure 8. “Saturation” and “On” Voltages
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
−2.0
T
A
= 25°C
−1.6
−1.2
I
C
=
−10 mA
I
C
= −50 mA
I
C
= −20 mA
I
C
= −200 mA
I
C
= −100 mA
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.8
−0.4
0
−0.02
−0.1
−1.0
I
B
, BASE CURRENT (mA)
−10 −20
−0.2
−10
−1.0
I
C
, COLLECTOR CURRENT (mA)
−100
Figure 9. Collector Saturation Region
f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 10. Base−Emitter Temperature
Coefficient
400
300
200
150
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
V
CE
= −10 V
T
A
= 25°C
10
7.0
C, CAPACITANCE (pF)
5.0
C
ob
C
ib
T
A
= 25°C
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current−Gain − Bandwidth Product
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