LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Featrues
Pb-Free Package is Available.
Ordering Information
Device
LBCX70GLT1G
LBCX70GLT3G
LBCX70JLT1G
LBCX70JLT3G
LBCX70KLT1G
LBCX70KLT3G
Marking
AG
AG
AJ
AJ
AK
AK
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
LBCX70GLT1G
LBCX70JLT1G
LBCX70KLT1G
3
1
2
MAXIMUM RATINGS
CASE 318–08, STYLE 6
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
45
45
5.0
200
Unit
Vdc
Vdc
Vdc
mAdc
1
SOT–23 (TO–236AB)
3
COLLECTOR
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
BASE
2
EMITTER
DEVICE MARKING
LBCX70GLT1G = AG ; LBCX70JLT1G = AJ ; LBCX70KLT1G = AK ;
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0mAdc, I
E
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 32 Vdc, )
(V
CE
= 32 Vdc, T
A
= 150°C )
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0 )
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
EBO
V
(BR)CEO
45
—
Vdc
V
(BR)EBO
I
CES
5.0
—
Vdc
—
—
20
20
nAdc
µAdc
—
20
nAdc
1/7
LESHAN RADIO COMPANY, LTD.
LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
BCX70G
BCX70J
BCX70K
BCX70G
BCX70J
BCX70K
BCX70G
BCX70J
BCX70K
V
CE(sat)
—
—
V
BE(sat)
Min
Max
Unit
—
ON CHARACTERISTICS
DC Current Gain
( I
C
= 10
µAdc,
V
CE
= 5.0 Vdc )
––
40
100
120
250
380
60
90
100
—
––
––
220
460
630
—
––
––
Vdc
0.55
0.35
Vdc
0.7
0.6
V
BE(on)
0.55
1.05
0.85
0.75
Vdc
( I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc )
( I
C
= 50 mAdc, V
CE
= 1.0 Vdc )
Collector–Emitter Saturation Voltage
( I
C
= 50 mAdc, I
B
= 1.25 mAdc )
( I
C
= 10 mAdc, I
B
= 0.25mAdc )
Base–Emitter Saturation Voltage
( I
C
= 50 mAdc, I
B
= 1.25 mAdc )
( I
C
= 50 mAdc, I
B
= 0.25mAdc )
Base–Emitter On Voltage
( I
C
= 2.0 mAdc, V
CE
= 5.0Vdc )
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
C
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
f
T
C
obo
h
FE
BCX70G
BCX70J
BCX70K
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF
125
250
350
—
250
500
700
6.0
dB
125
—
—
4.5
MHz
pF
—
SWITCHING CHARACTERISTICS
Turn–On Time
( I
C
= 10 mAdc; I
B1
= 1.0 mAdc )
Turn–Off Time
t
on
t
off
—
—
150
800
ns
ns
( I
B2
= 1.0 mAdc; V
BB
=3.6Vdc; R
1
= R
2
= 5.0 kΩ ; R
L
=990Ω )
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+10.9 V
+3.0 V
10 < t
1
< 500
µs
t
10 k
275
DUTY CYCLE = 2%
0
– 9.1 V
1
+10.9 V
275
10 k
C
S
< 4.0 pF*
1N916
<1.0 ns
C
S
< 4.0 pF*
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2/7
LESHAN RADIO COMPANY, LTD.
LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
20
100
I
C
=1.0 mA
e
n
, NOISE VOLTAGE (nV)
300µA
10
BANDWIDTH = 1.0 Hz
R ~0
~
S
50
20
I
C
=1.0mA
300µA
BANDWIDTH = 1.0 Hz
R ~
~
S
I
n
, NOISE CURRENT (pA)
10
5.0
2.0
1.0
0.5
0.2
0.1
10
20
50
100
200
100µA
7.0
5.0
100µA
3.0
10µA
30µA
30µA
10µA
500
1.0k
2.0k
5.0k
10 k
2.0
10
20
50
100
200
500 1.0k
2.0k
5.0k
10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500k
200k
BANDWIDTH = 1.0 Hz
1.0M
500k
BANDWIDTH = 1.0 Hz
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
10
20
30
50
70 100
200
300
500 700 1.0K
R
S
, SOURCE RESISTANCE (
Ω
)
R
S
, SOURCE RESISTANCE (
Ω
)
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70 100
200
300
2.0 dB
3.0 dB 4.0dB
6.0 dB
10 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
500 700 1.0K
I
C
, COLLECTOR CURRENT (µA)
I
C
, COLLECTOR CURRENT (µA)
Figure 5. Narrow Band, 100 Hz
500k
10 Hz to 15.7KHz
Figure 6. Narrow Band, 1.0 kHz
R
S
, SOURCE RESISTANCE (
Ω
)
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
10
20
30
50
70 100
200
Noise Figure is Defined as:
NF = 20 log
10
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
300
500 700 1.0K
( –––––––––––––––)
4KTR
S
e
n 2
+4KTR
S
+I
n2
R
S2
1/ 2
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
–23
j/°K)
T = Temperature of the Source Resistance (°K)
R
s
= Source Resistance (
Ω
)
I
C
, COLLECTOR CURRENT (µA)
Figure 7. Wideband
8
3/7
LESHAN RADIO COMPANY, LTD.
LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
h
FE
, DC CURRENT GAIN
200
25°C
100
80
60
– 55°C
V
CE
= 1.0 V
V
CE
= 10 V
0.02 0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
40
0.0040.006 0.01
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
1.0
100
T
J
= 25°C
0.8
80
T
A
= 25°C
PULSE WIDTH =300
µs
DUTY CYCLE<2.0%
I
B
= 500
µA
400
µA
300
µA
0.6
I
C
= 1.0 mA
10 mA
50 mA
100 mA
60
200
µA
40
0.4
100
µA
20
0.2
0
0.002 0.0050.010.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
20
0
0
5.0
10
15
20
25
30
35
40
I
B
, BASE CURRENT (mA)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region
1.4
Figure 10. Collector Characteristics
θ
V
, TEMPERATURE COEFFICIENTS (mV/°C)
1.6
T
J
= 25°C
1.2
*APPLIES for I
C
/ I
B
< h
FE
/ 2
0.8
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
∗ θ
VC
for V
CE(sat)
25°C to 125°C
–55°C to 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
–0.8
25°C to 125°C
–1.6
V
CE(sat)
@ I
C
/I
B
= 10
θ
VB
for V
BE
–55°C to 25°C
–2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
4/7
LESHAN RADIO COMPANY, LTD.
LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G
TYPICAL DYNAMIC CHARACTERISTICS
300
200
100
70
1000
700
500
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
t
s
300
200
100
70
50
30
t, TIME (ns)
50
30
20
10
7.0
5.0
3.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
t
f
t
d
@ V
BE(off)
= 0.5 V
t
f
V
CC
= 3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25°C
2.0
3.0
5.0
7.0
10
20
30
50
70
100
20
10
1.0
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Turn–On Time
f
T
, CURRENT– GAIN BANDWIDTH PRODUCT (MHz)
500
10.0
Figure 14. Turn–Off Time
C, CAPACITANCE (pF)
300
T
J
= 25°C
f=100MHz
V
CE
=20 V
7.0
5.0
T
J
= 25°C
f = 1.0MHz
C
ib
200
5.0 V
C
ob
3.0
100
2.0
70
50
0.5
1.0
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 15. Current–Gain — Bandwidth Product
h
oe
, OUTPUT ADMITTANCE (
µmhos
)
20
200
100
70
50
Figure 16. Capacitance
h
ie
, INPUT IMPEDANCE ( kΩ )
10
7.0
5.0
3.0
2.0
h
fe
~
200 @ I
C
= 1.0 mA
~
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
h
fe
~
200 @ I
C
= 1.0 mA
~
30
20
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. Input Impedance
Figure 18. Output Admittance
5/7
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