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BAV170LT1

Description
0.2A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-08, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size297KB,33 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAV170LT1 Overview

0.2A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-08, 3 PIN

BAV170LT1 Parametric

Parameter NameAttribute value
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionCASE 318-08, 3 PIN
Contacts3
Manufacturer packaging codeCASE 318-08
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum reverse recovery time3 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Monolithic Dual Switching Diode
This switching diode has the following features:
Low Leakage Current Applications
Medium Speed Switching Times
Available in 8 mm Tape and Reel
Use BAV170LT1 to order the 7 inch/3,000 unit reel
Use BAV170LT3 to order the 13 inch/10,000 unit reel
BAV170LT1
Motorola Preferred Device
3
1
2
ANODE
1
3
CATHODE
2
ANODE
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Symbol
PD
Value
70
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BAV170LT1 = JX
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100
µAdc)
Reverse Voltage Leakage Current (VR = 70 Vdc)
Reverse Voltage Leakage Current
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage
(IF = 10 mAdc)
Forward Voltage
(IF = 50 mAdc)
Forward Voltage
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4
0.3
RL = 100
V(BR)
IR
CD
VF
70
5.0
80
2.0
900
1000
1100
1250
3.0
Vdc
nAdc
pF
mVdc
trr
µs


0.062 in.
 
0.024 in. 99.5% alumina.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
5–50
Motorola Small–Signal Transistors, FETs and Diodes Device Data

BAV170LT1 Related Products

BAV170LT1 BAV170LT3
Description 0.2A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-08, 3 PIN 0.2A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-08, 3 PIN
Parts packaging code SOT-23 SOT-23
package instruction CASE 318-08, 3 PIN CASE 318-08, 3 PIN
Contacts 3 3
Manufacturer packaging code CASE 318-08 CASE 318-08
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 2 2
Number of terminals 3 3
Maximum output current 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.225 W 0.225 W
Certification status Not Qualified Not Qualified
Maximum reverse recovery time 3 µs 3 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL

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