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2SK3555-01MR

Description
Power Field-Effect Transistor, 25A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size323KB,20 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

2SK3555-01MR Overview

Power Field-Effect Transistor, 25A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

2SK3555-01MR Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)372 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
DRAWN
DATE
Oct.-04-'01
CHECKED
Oct.-04-'01
CHECKED
Oct.-04-'01
Date
Spec. No.
Type Name
Device Name
:
:
:
:
NAME
APPROVED
SPECIFICATION
Oct.-04-2001
2SK3555-01MR
Power MOSFET
MS5F5065
DWG.NO.
MS5F5065
Fuji Electric Co.,Ltd.
Fuji Electric Co.,Ltd.
Matsumoto Factory
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