IRC640-011PBF datasheet, PDF - EEWORLD Datasheet

IRC640-011PBF: DescriptionPower Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN; CategoryDiscrete semiconductor The transistor; File Size38KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRC640-011PBF Overview

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-220
package instruction	FLANGE MOUNT, R-PSFM-T5
Contacts	5
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T5
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	250
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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