PD-96912A
RADIATION HARDENED
IRHMK597160
POWER MOSFET
100V, P-CHANNEL
TECHNOLOGY
SURFACE MOUNT (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level R
DS(on)
IRHMK597160 100K Rads (Si)
0.05Ω
IRHMK593160 300K Rads (Si)
0.05Ω
I
D
-45A*
-45A*
Low-Ohmic
TO-254AA Tabless
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pack. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
-45*
-30
-180
208
1.67
±20
480
-45
20.8
-6.0
-55 to 150
300 (for 5s)
3.7 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
12/12/06
IRHMK597160
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Min
-100
Typ Max Units
—
-0.13
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.05
-4.0
—
-10
-25
-100
100
170
65
30
35
140
70
45
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -30A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -30A
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -45A
VDS = -50V
VDD = -50V, ID = -45A
VGS =-12V, RG = 1.2Ω
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
24
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6110
1574
115
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-45*
-180
-5.0
200
1.6
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -45A, VGS = 0V
Tj = 25°C, IF =-45A, di/dt
≤
-100A/µs
VDD
≤
-25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
0.21
—
0.6
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHMK597160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Resistance(Low-OhmicTO-254AA)
Diode Forward Voltage
100K Rads(Si)
1
Min
Max
-100
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
-10
0.05
0.05
-5.0
300KRads(Si)
2
Min
Max
-100
-2.0
—
—
—
—
—
—
—
-5.0
-100
100
-10
0.05
0.05
-5.0
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
= -80V, V
GS
=0V
V
GS
= -12V, I
D
= -30A
V
GS
= -12V, I
D
= -30A
V
GS
= 0V, IS = -45A
1. Part number IRHMK597160
2. Part number IRHMK593160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.9
59.7
82.3
Energy
(MeV)
252.6
314
350
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=5V @V
GS
=10V @V
GS
=15V @V
GS
=17.5V @V
GS
=20V
33.1
-100
-100
-100
-100
-100
-100
30.5
-100
-100
-100
-100
-75
-25
28.4
-100
-100
-100
-30
—
—
-120
-100
-80
VDS
-60
Br
I
Au
-40
-20
0
0
5
10
15
20
25
VGS
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHMK597160
Pre-Irradiation
1000
-I
D
, Drain-to-Source Current (A)
100
-5.0V
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-5.0V
10
10
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
2.5
I
D
= -45A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 150
°
C
1.5
100
1.0
0.5
10
5.0
V DS =
15
-50V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
0.0
-60 -40 -20
V
GS
= -12V
0
20 40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHMK597160
10000
-V
GS
, Gate-to-Source Voltage (V)
8000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -45A
V
DS
=-80V
V
DS
=-50V
V
DS
=-20V
16
C, Capacitance (pF)
6000
Ciss
12
4000
Coss
8
2000
4
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
-I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
T
J
= 25
°
C
-I D, Drain-to-Source Current (A)
100
100µs
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10
10
1
10ms
0.1
0.0
V
GS
= 0 V
1.5
3.0
4.5
6.0
1
-V
SD
,Source-to-Drain Voltage (V)
1000
-VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
