specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
Features
•
15 A, 30 V.
R
DS(ON)
= 7.5 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 6.5 mΩ @ V
GS
= 10 V
Applications
•
Synchronous Rectifier
•
DC/DC converter
•
High performance trench technology for extremely
low R
DS(ON)
High power and current handling
capability
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±12
(Note 1a)
Units
V
V
A
W
15
50
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
50 (10 sec)
30
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS7764A
Device
FDS7764A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
FDS7764A Rev B(W)
FDS7764A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= –12 V , V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 4.5 V,
V
GS
= 4.5 V,
V
DS
= 10 V,
I
D
= 15.5 A
I
D
= 15 A
I
D
= 15 A, T
J
= 125°C
V
DS
= 5 V
I
D
= 15 A
Min
30
Typ
Max Units
V
Off Characteristics
20
1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
0.8
1.2
-4
5.3
6.0
9.0
2.0
V
mV/°C
6.5
7.5
13.0
mΩ
I
D(on)
g
FS
50
75
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
5070
550
230
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
17
18
69
29
25
25
100
42
46
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V, I
D
= 15 A,
V
GS
= 4.5 V
33
7.5
6.8
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 2.1 A
Voltage
2.1
(Note 2)
A
V
0.7
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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