Polar
TM
Power MOSFET
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
IXFK120N25P
IXFX120N25P
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
250V
120A
24mΩ
Ω
200ns
TO-264 (IXFK)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Mounting Torque
PLUS247
TO-264
(PLUS247)
(TO-264)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
Lead Current Limit, RMS
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
250
250
±20
±30
120
75
300
60
2.5
10
700
-55 ... +150
150
-55 ... +150
300
260
20..120/4.5..27
1.13/10
6
10
V
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
G = Gate
S = Source
D
= Drain
TAB = Drain
(TAB)
G
D
S
(TAB)
PLUS247 (IXFX)
Features
International Standard Packages
Fast Intrinsic Diode
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
19
Characteristic Values
Min.
Typ.
Max.
250
2.5
5.0
V
V
Easy to Mount
Space Savings
High Power Density
Applications
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
±200
nA
25
μA
250
μA
24 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
DS99379F(5/09)
IXFK120N25P
IXFX120N25P
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ. Max.
45
70
8700
1300
240
30
33
130
33
185
50
80
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18
°C/W
°C/W
TO-264 (IXFK) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 120A, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
0.8
8.0
Characteristic Values
Min. Typ.
Max.
120
300
1.5
A
A
V
PLUS 247
TM
(IXFX) Outline
200 nS
μC
A
Note 1: Pulse Test, t
≤
300μs; Duty Cycle, d
≤
2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK120N25P
IXFX120N25P
Fig. 1. Output Characteristics
@ 25ºC
120
110
100
90
200
8V
9V
V
GS
= 10V
9V
240
V
GS
= 10V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
I
D
- Amperes
80
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
160
8V
120
7V
7V
80
6V
40
6V
0
2.4
2.8
3.2
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
120
V
GS
= 10V
9V
8V
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 60A Value
vs. Junction Temperature
V
GS
= 10V
100
I
D
- Amperes
80
7V
60
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 60A
I
D
= 120A
40
6V
20
5V
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 60A Value
vs. Drain Current
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0
30
60
90
120
150
180
210
240
270
T
J
= 25ºC
V
GS
= 10V
15V
T
J
= 150ºC
90
80
70
Fig. 6. Maximum Drain Current vs.
Case Temperature
External Lead Current Limit
----
I
D
- Amperes
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
R
DS(on)
- Normalized
I
D
- Amperes
T
C
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK120N25P
IXFX120N25P
Fig. 7. Input Admittance
200
180
160
140
120
110
100
90
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
80
70
60
120
100
80
60
40
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
T
J
= 125ºC
25ºC
- 40ºC
25ºC
125ºC
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
180
200
220
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
8
250
7
10
9
V
DS
= 125V
I
D
= 60A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
200
150
100
50
0
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
180
200
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
f
= 1 MHz
Capacitance - PicoFarads
I
D
- Amperes
10,000
Ciss
25µs
100
100µs
Coss
1,000
1ms
10
T
J
= 150ºC
10ms
DC
Crss
100
0
5
10
15
20
25
30
35
40
1
10
T
C
= 25ºC
Single Pulse
100
1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK120N25P
IXFX120N25P
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z
(th)JC
- ºC / W
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_120N25P(88)4-27-09
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