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FQPF9N50YDTU

Description
5.3A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,11 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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FQPF9N50YDTU Overview

5.3A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN

FQPF9N50YDTU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-220F
package instructionTO-220F, 3 PIN
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)360 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)5.3 A
Maximum drain-source on-resistance0.73 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)21 A
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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FQPF9N50YDTU Related Products

FQPF9N50YDTU FQPF9N50 FQPF9N50T
Description 5.3A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN 5.3A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN 5.3A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Rochester Electronics Rochester Electronics Rochester Electronics
Parts packaging code TO-220F TO-220F TO-220F
package instruction TO-220F, 3 PIN TO-220F, 3 PIN TO-220F, 3 PIN
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Avalanche Energy Efficiency Rating (Eas) 360 mJ 360 mJ 360 mJ
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V 500 V
Maximum drain current (ID) 5.3 A 5.3 A 5.3 A
Maximum drain-source on-resistance 0.73 Ω 0.73 Ω 0.73 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3
Humidity sensitivity level NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 21 A 21 A 21 A
Certification status COMMERCIAL COMMERCIAL COMMERCIAL
surface mount NO NO NO
Terminal surface TIN MATTE TIN MATTE TIN
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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