FDC5612
December 2004
FDC5612
60V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
•
4.3 A, 60 V. R
DS(ON)
= 0.055
Ω
•
•
•
•
@ V
GS
= 10 V
R
DS(ON)
= 0.064
Ω
@ V
GS
= 6 V
Low gate charge (12.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
D
1
6
2
5
G
D
SuperSOT -6
TM
3
4
D
T
A
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
60
(Note 1a)
Units
V
V
A
W
°
C
±
20
4.3
20
1.6
0.8
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
.562
Device
FDC5612
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©
2004 Fairchild Semiconductor Corporation
FDC5612 Rev. C2
FDC5612
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
V
GS
= 0 V, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
V
DS
= 48 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
Min Typ
Max Units
Off Characteristics
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
(Note 2)
60
58
1
100
-100
V
mV/
°
C
µ
A
nA
nA
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 4.3 A
V
GS
= 10 V, I
D
= 4.3 A, T
J
= 125
°
C
V
GS
= 6 V, I
D
= 4 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 4.3 A
2
2.2
-5.5
0.042
0.072
0.048
4
V
mV/
°
C
0.055
0.094
0.064
Ω
I
D(on)
g
FS
10
14
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
650
80
35
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
11
8
19
6
20
18
35
15
18
ns
ns
ns
ns
nC
nC
nC
V
DS
= 30 V, I
D
= 4.3 A,
V
GS
= 10 V
12.5
2.4
2.6
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
1.3
0.75
1.2
A
V
Notes:
1.
R
qJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
qJC
is guaranteed by design while R
qCA
is determined by the user's board design.
a) 78°
C/W when mounted on a 1.0 in
2
pad of 2 oz. copper.
b) 156°
C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
FDC5612 Rev. C2
FDC5612
Typical Characteristics
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
= 10V
6.0V
16
5.0V
4.0V
12
4.5V
R
DS(O N)
, N OR M A LIZ ED
D R AIN -SO U RC E O N -R ES ISTA NC
1 .8
1 .6
V
G S
= 4 .0 V
1 .4
4 .5 V
5 .0 V
1 .2
6 .0 V
8 .0 V
1
1 0V
8
3.5V
4
0
0
1
2
3
4
0 .8
0
4
8
12
16
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, D RA IN C U RR EN T (A )
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
0.14
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
I
D
= 4.3A
V
GS
= 10V
I
D
= 2.2A
0.12
0.1
0.08
0.06
0.04
0.02
0
o
T
A
= 125 C
o
T
A
= 25 C
-25
0
25
50
75
100
o
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
20
25 C
125 C
o
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
T
A
= -55 C
o
o
V
GS
= 0V
10
1
0.1
0.01
0.001
0.0001
T
A
= 125 C
25 C
-55 C
o
o
o
I
D
, DRAIN CURRENT (A)
16
12
8
4
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC5612 Rev. C2
FDC5612
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 4.3A
8
V
DS
= 10V
20V
900
800
C
ISS
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
30V
6
700
600
500
400
300
200
100
C
OSS
C
RSS
4
2
0
0
2
4
6
8
10
12
14
Q
g
, GATE CHARGE (nC)
0
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
10
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
10
1ms
10ms
100ms
1s
10s
0.1
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 156 C/W
T
A
= 25 C
0.01
0.1
1
10
o
100
µ
s
8
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
6
1
DC
4
2
100
0
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 156 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC5612 Rev. C2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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2
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I14
Embedded System
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