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IC41C44002-50JI

Description
EDO DRAM, 4MX4, 50ns, CMOS, PDSO24
Categorystorage    storage   
File Size196KB,20 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IC41C44002-50JI Overview

EDO DRAM, 4MX4, 50ns, CMOS, PDSO24

IC41C44002-50JI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
package instructionSOJ-26/24
Reach Compliance Codecompliant
access modeEDO PAGE
Maximum access time50 ns
Other featuresRAS ONLY CAS BEFORE RAS /HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J24
JESD-609 codee0
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals24
word count4194304 words
character code4000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ24/26,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
refresh cycle2048
reverse pinoutNO
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal locationDUAL
IC41C4400x and IC41LV4400x Series
Document Title
4Mx4 bit Dynamic RAM with EDO Page Mode
Revision History
Revision No
0A
0B
History
Initial Draft
add Industrial grade parts
Draft Date
May 20,2001
October 17,2002
Remark
Preliminary
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
DR007-0B 10/17/2002
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