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MT28F800B1WG-10BVET

Description
Flash, 1MX8, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48
Categorystorage    storage   
File Size149KB,13 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT28F800B1WG-10BVET Overview

Flash, 1MX8, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48

MT28F800B1WG-10BVET Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeTSOP1
package instruction12 X 20 MM, PLASTIC, TSOP1-48
Contacts48
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time100 ns
Other featuresUSER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK
startup blockBOTTOM
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density8388608 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)235
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
typeNOR TYPE
width12 mm
OBSOLETE
EXTENDED TEMPERATURE
BOOT BLOCK FLASH MEMORY
FLASH MEMORY
FEATURES
• Extended temperature range operation:
-40°C to +85°C
• Boot block architecture:
16KB/4K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Multiple 128KB/64K-word main blocks
• Low-voltage operation:
3.0V to 3.6V V
CC
5V
±10%
or 12V
±5%
V
PP
• Address access time:
100ns at 3.3V
±0.3V
• Available densities:
4Mb, 8Mb
• Industry-standard pinouts
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP and FBGA* packaging options
MT28F400B1 VET, MT28F800B1 VET,
MT28F004B1 VET, MT28F008B1 VET
Low Voltage, Extended Temperature
PIN ASSIGNMENT (Top View)
40-Pin TSOP Type I
(C-2)
8Mb
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
V
PP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
4Mb
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
V
PP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
4Mb
A17
V
SS
NC
NC
A10
DQ7
DQ6
DQ5
DQ4
V
CC
V
CC
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
8Mb
A17
V
SS
NC
A19
A10
DQ7
DQ6
DQ5
DQ4
V
CC
V
CC
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
OPTIONS
• Timing
100ns access
• Boot Block Starting Address
Top
Bottom
• Voltage
3.0V to 3.6 V
CC
• Operating Temperature Range
Extended (-40°C to +85°C)
MARKING
-10
T
B
V
ET
8Mb
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
V
PP
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
4Mb
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
V
PP
WP#
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-Pin TSOP Type I
(C-3)
4Mb
8Mb
A16
A16
BYTE# BYTE#
V
SS
V
SS
DQ15/A-1 DQ15/A-1
DQ7
DQ7
DQ14
DQ14
DQ6
DQ6
DQ13
DQ13
DQ5
DQ5
DQ12
DQ12
DQ4
DQ4
V
CC
V
CC
DQ11
DQ11
DQ3
DQ3
DQ10
DQ10
DQ2
DQ2
DQ9
DQ9
DQ1
DQ1
DQ8
DQ8
DQ0
DQ0
OE#
OE#
V
SS
V
SS
CE#
CE#
A0
A0
• Packages
Plastic 40-pin TSOP Type 1 (10mm x 20mm) VG
Plastic 48-pin TSOP Type 1 (12mm x 20mm) WG
48-bump FBGA (8 x 6 ball grid)
FB*
• Part Number Example: MT28F400B1WG-10 TVET
* MT28F800B1 VET only. Contact factory for availability.
GENERAL DESCRIPTION
The Micron
®
low voltage, extended temperature flash
memory family consists of 4Mb and 8Mb boot block flash
memories. They are fabricated with Micron’s advanced
CMOS floating-gate process. Device operation and features
are identical to the commercial temperature equivalent
except that extended temperature range operation (-40°C to
Extended Temperature Boot Block Flash Memory
F32.p65 – Rev. 2/99
+85°C) is supported for all operations. For further informa-
tion on device operation or features, refer to the equivalent
commercial temperature device data sheets.
Please refer to Micron’s Web site (www.micron.com/
flash/htmls/datasheets.html) for the latest full-length data
sheet.
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
Micron is a registered trademark of Micron Technology, Inc.
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