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DT310N20KOC

Description
Silicon Controlled Rectifier, 310000mA I(T), 2000V V(RRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size413KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

DT310N20KOC Overview

Silicon Controlled Rectifier, 310000mA I(T), 2000V V(RRM)

DT310N20KOC Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeMODULE
Contacts5
Reach Compliance Codecompliant
Quick connection descriptionG-GR
Description of screw terminalsA-K-AK
On-state non-repetitive peak current9000 A
Maximum on-state current310000 A
Maximum operating temperature125 °C
Repeated peak reverse voltage2000 V
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT310N
TT310N
Kenndaten
TT310N...-A
TD310N
DT310N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 58°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6 f = 50 Hz,
i
GM
= 1,25 A, di
G
/dt = 1,25 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter C
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
2000
2400
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
2000
2400
2100
2500
2200 V
2600 V
2200 V
2600 V
2300 V
2700 V
700 A
310 A
446 A
10000 A
9000 A
500000 A²s
405000 A²s
120 A/µs
500 V/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 1300 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
T
vj
= 25°C, v
D
= 6 V, R
GK
10
i
GM
= 1,25 A, di
G
/dt = 1,25 A/µs,
t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6 T
vj
= 25 °C,
i
GM
= 1,25 A, di
G
/dt = 1,25 A/µs
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
max.
2,22 V
1 V
0,86 mΩ
max.
max.
max.
max.
max.
max.
max.
250 mA
1,5 V
10 mA
5 mA
0,2 V
300 mA
1500 mA
i
D
, i
R
t
gd
max.
max.
80 mA
3,3 µs
prepared by: C.Drilling
approved by: J. Novotny
date of publication:
revision:
18.12.02
1
BIP AC / 22 Nov 1994, A. Rüther
A 72/94
Seite/page
1/12
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