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DT210N14KOF-K

Description
Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size423KB,12 Pages
ManufacturerEUPEC [eupec GmbH]
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DT210N14KOF-K Overview

Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element,

DT210N14KOF-K Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Nominal circuit commutation break time250 µs
ConfigurationSINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage2 V
Quick connection descriptionG-GR
Description of screw terminals2A-CK
Maximum holding current300 mA
JESD-30 codeR-XUFM-X7
Maximum leakage current50 mA
On-state non-repetitive peak current5800 A
Number of components1
Number of terminals7
Maximum on-state current210000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current410 A
Off-state repetitive peak voltage1400 V
Repeated peak reverse voltage1400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Trigger device typeSCR
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT210N
TT210N
Kenndaten
TD210N
TD210N...-A
DT210N
TD210N...-K
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 73°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
1200
1600
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1600
1300
1700
1400 V
1800 V
1400 V
1800 V
1500 V
1900 V
410 A
210 A
261 A
6600 A
5800 A
218000 A²s
168000 A²s
150 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 700 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
max.
1,65 V
1 V
0,85 mΩ
max.
max.
max.
max.
max.
max.
max.
max.
max.
200 mA
2 V
10 mA
5 mA
0,2 V
300 mA
1200 mA
50 mA
3 µs
T
vj
= 25°C, v
D
= 6 V, R
GK
10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/µs
i
D
, i
R
t
gd
prepared by: C.Drilling
approved by: J. Novotny
date of publication:
revision:
03.04.02
1
BIP AC / Warstein,den 03.04.85 Bösterling
A4 /82
Seite/page
1/12

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Description Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element,
Reach Compliance Code unknown unknown unknown unknown
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Nominal circuit commutation break time 250 µs 250 µs 250 µs 250 µs
Configuration SINGLE WITH BUILT-IN FREE-WHEELING DIODE SINGLE WITH BUILT-IN FREE-WHEELING DIODE SINGLE WITH BUILT-IN FREE-WHEELING DIODE SINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 200 mA 200 mA 200 mA 200 mA
Maximum DC gate trigger voltage 2 V 2 V 2 V 2 V
Quick connection description G-GR G-GR G-GR G-GR
Description of screw terminals 2A-CK 2A-CK 2A-CK 2A-CK
JESD-30 code R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7
Maximum leakage current 50 mA 50 mA 50 mA 50 mA
On-state non-repetitive peak current 5800 A 5800 A 5800 A 5800 A
Number of components 1 1 1 1
Number of terminals 7 7 7 7
Maximum on-state current 210000 A 210000 A 210000 A 210000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 410 A 410 A 410 A 410 A
Off-state repetitive peak voltage 1400 V 1200 V 1600 V 1800 V
Repeated peak reverse voltage 1400 V 1200 V 1600 V 1800 V
surface mount NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER
Trigger device type SCR SCR SCR SCR
Maximum holding current 300 mA 300 mA 300 mA -
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