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DT121N18KOF

Description
Silicon Controlled Rectifier
CategoryAnalog mixed-signal IC    Trigger device   
File Size413KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

DT121N18KOF Overview

Silicon Controlled Rectifier

DT121N18KOF Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Trigger device typeSCR
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT121N
TT121N
000Kenndaten
TD121N
DT121N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 81°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6 f = 50 Hz,
i
GM
= 0,6A, di
G
/dt = 0,6A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter C
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
1200
1600
2000
1200
V
DSM
1600
2000
1300
V
RSM
1700
2100
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1400 V
1800 V
V
1400 V
1800 V
V
1500 V
1900 V
V
200 A
121 A
128 A
2600 A
2350 A
33800 A²s
27600 A²s
150 A/µs
1)
500 V/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
1) 2000V auf Anfrage / 2000V on request
prepared by: C.Drilling
approved by: J. Novotny
T
vj
= T
vj max
, i
T
= 350 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
T
vj
= 25°C, v
D
= 6 V, R
GK
10
i
GM
= 0,6A, di
G
/dt = 0,6A/µs,
t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6 T
vj
= 25 °C,
i
GM
= 0,6 A, di
G
/dt = 0,6 A/µs
date of publication:
revision:
15.05.02
2
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
max.
1,65 V
0,85 V
2 mΩ
max.
max.
max.
max.
max.
max.
max.
150 mA
1,4 V
5,0 mA
2,5 mA
0,2 V
200 mA
620 mA
i
D
, i
R
t
gd
max.
max.
25 mA
3 µs
BIP AC 15.05.2002; Drilling
A 03/02
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1/12
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