DT150N22KOC datasheet, PDF - EEWORLD Datasheet

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DT150N22KOC: DescriptionSilicon Controlled Rectifier; CategoryAnalog mixed-signal IC Trigger device; File Size414KB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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DT150N22KOC Overview

Silicon Controlled Rectifier

DT150N22KOC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Nominal circuit commutation break time	300 µs
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	300 mA
JESD-30 code	R-XUFM-X5
Maximum leakage current	50 mA
On-state non-repetitive peak current	4500 A
Number of components	2
Number of terminals	5
Maximum on-state voltage	2.6 V
Maximum on-state current	223000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum rms on-state current	350 A
Off-state repetitive peak voltage	2200 V
Repeated peak reverse voltage	2200 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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Netz-Thyristor-Modul

Phase Control Thyristor Module

Datenblatt / Data sheet

TT150N

Kenndaten

TD150N

DT150N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85°C

= 54°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6

letter C

6.Kennbuchstabe / 6

letter F

= -40°C... T

vj max

= +25°C... T

vj max

Elektrische Eigenschaften

DRM

RRM

2000

2400

DSM

RSM

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

2000

2400

2100

2500

2200 V

2600 V

2200 V

2600 V

2300 V

2700 V

350 A

150 A

223 A

4500 A

4000 A

102000 A²s

80000 A²s

60 A/µs

500 V/µs

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= T

vj max

, i

= 600 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

(TO)

max.

2,6 V

1,2 V

2,3 mΩ

max.

200 mA

2 V

10 mA

5 mA

0,2 V

300 mA

1200 mA

50 mA

4 µs

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

prepared by: C.Drilling

approved by: J. Novotny

date of publication:

revision:

23.09.02

BIP AC / Warstein,den 18.01.88 Spec

A513MT3

Seite/page

1/12

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