DT162N12KOC datasheet, PDF - EEWORLD Datasheet

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DT162N12KOC: DescriptionSilicon Controlled Rectifier, 162000mA I(T), 1200V V(RRM); CategoryAnalog mixed-signal IC Trigger device; File Size411KB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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DT162N12KOC Overview

Silicon Controlled Rectifier, 162000mA I(T), 1200V V(RRM)

DT162N12KOC Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	MODULE
Contacts	5
Reach Compliance Code	compliant
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2 V
Quick connection description	G-GR
Description of screw terminals	A-K-AK
Maximum holding current	200 mA
Maximum leakage current	30 mA
On-state non-repetitive peak current	5200 A
Maximum on-state voltage	1.41 V
Maximum on-state current	162000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Repeated peak reverse voltage	1200 V

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Netz-Thyristor-Modul

Phase Control Thyristor Module

Datenblatt / Data sheet

TT162N

Kenndaten

TT162N...-K

TD162N

TD162N...-A

DT162N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6 f = 50 Hz,

= 0,6 A, di

/dt = 0,6 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6

letter C

6.Kennbuchstabe / 6

letter F

= -40°C... T

vj max

= +25°C... T

vj max

Elektrische Eigenschaften

DRM

RRM

1200

DSM

RSM

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

1200

1300

1400 V

1600 V

1400 V

1600 V

1500 V

1700 V

260 A

162 A

5200 A

4400 A

135000 A²s

97000 A²s

150 A/µs

500 V/µs

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

prepared by: C.Drilling

approved by: J.Novotny

= T

vj max

, i

= 500 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

= 25°C, v

= 6 V, R

≥

Ω

= 0,6 A, di

/dt = 0,6 A/µs,

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6T

= 25 °C,

= 0,6 A, di

/dt = 0,6 A/µs

date of publication:

revision:

04.07.02

(TO)

max.

1,41 V

0,85 V

0,95 mΩ

max.

150 mA

2 V

10 mA

5 mA

0,25 V

200 mA

800 mA

, i

max.

30 mA

3 µs

BIP AC / Warstein,den 18.01.88 Spec

A513MT

Seite/page

1/12

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