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M1MA152AT3

Description
0.1A, SILICON, SIGNAL DIODE, SC-59, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size49KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

M1MA152AT3 Overview

0.1A, SILICON, SIGNAL DIODE, SC-59, 3 PIN

M1MA152AT3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSC-59
package instructionSC-59, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current0.5 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.003 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
M1MA151AT1,
M1MA152AT1
Preferred Device
Single Silicon Switching
Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC–59 package which is designed for low power surface mount
applications.
Fast t
rr
, < 3.0 ns
Low C
D
, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
M1MA151AT1
M1MA152AT1
Peak Reverse Voltage
M1MA151AT1
M1MA152AT1
Forward Current
Peak Forward Current
Peak Forward Surge Current
I
F
I
FM
I
FSM
(Note 1)
V
RM
Symbol
V
R
Value
40
80
40
80
100
225
500
mAdc
mAdc
mAdc
2
1
3
http://onsemi.com
SC–59 PACKAGE SINGLE SILICON
SWITCHING DIODES 40/80 V–100 mA
SURFACE MOUNT
ANODE
3
Unit
Vdc
1
2
CATHODE NO CONNECTION
Vdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
1. t = 1 SEC
Symbol
P
D
T
J
T
stg
Max
200
150
–55 to +150
Unit
mW
°C
°C
SC–59
SUFFIX
CASE 318D
MARKING DIAGRAM
Mx M
x = A for 151
B for 152
M = Date Code
Preferred
devices are recommended choices for future use
and best overall value.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2002
1
May, 2002 – Rev. 6
Publication Order Number:
M1MA151AT1/D
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