|
DCR1003SF17 |
DCR1003SF14 |
DCR1003SF15 |
DCR1003SF18 |
| Description |
Silicon Controlled Rectifier, 1200000mA I(T), 1700V V(DRM), |
Silicon Controlled Rectifier, 1200000mA I(T), 1400V V(DRM), |
Silicon Controlled Rectifier, 1200000mA I(T), 1500V V(DRM), |
Silicon Controlled Rectifier, 1200000mA I(T), 1800V V(DRM), |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
| Maker |
Zarlink Semiconductor (Microsemi) |
Zarlink Semiconductor (Microsemi) |
Zarlink Semiconductor (Microsemi) |
Zarlink Semiconductor (Microsemi) |
| Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
| Nominal circuit commutation break time |
110 µs |
110 µs |
110 µs |
110 µs |
| Critical rise rate of minimum off-state voltage |
1000 V/us |
1000 V/us |
1000 V/us |
1000 V/us |
| Maximum DC gate trigger current |
200 mA |
200 mA |
200 mA |
200 mA |
| Maximum DC gate trigger voltage |
3.5 V |
3.5 V |
3.5 V |
3.5 V |
| Maximum holding current |
230 mA |
230 mA |
230 mA |
230 mA |
| Maximum leakage current |
100 mA |
100 mA |
100 mA |
100 mA |
| On-state non-repetitive peak current |
21000 A |
21000 A |
21000 A |
21000 A |
| Maximum on-state current |
1200000 A |
1200000 A |
1200000 A |
1200000 A |
| Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
| Minimum operating temperature |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
| Off-state repetitive peak voltage |
1700 V |
1400 V |
1500 V |
1800 V |
| surface mount |
NO |
NO |
NO |
NO |
| Trigger device type |
SCR |
SCR |
SCR |
SCR |