|
DCR1275SD25 |
DCR1275SD23 |
DCR1275SD24 |
DCR1275SD26 |
| Description |
Silicon Controlled Rectifier, 1200000mA I(T), 2500V V(DRM), |
Silicon Controlled Rectifier, 1200000mA I(T), 2300V V(DRM), |
Silicon Controlled Rectifier, 1200000mA I(T), 2400V V(DRM), |
Silicon Controlled Rectifier, 1200000mA I(T), 2600V V(DRM), |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
| Maker |
Zarlink Semiconductor (Microsemi) |
Zarlink Semiconductor (Microsemi) |
Zarlink Semiconductor (Microsemi) |
Zarlink Semiconductor (Microsemi) |
| Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
| Nominal circuit commutation break time |
500 µs |
500 µs |
500 µs |
500 µs |
| Critical rise rate of minimum off-state voltage |
300 V/us |
300 V/us |
300 V/us |
300 V/us |
| Maximum DC gate trigger current |
400 mA |
400 mA |
400 mA |
400 mA |
| Maximum DC gate trigger voltage |
4 V |
4 V |
4 V |
4 V |
| Maximum holding current |
500 mA |
500 mA |
500 mA |
500 mA |
| Maximum leakage current |
150 mA |
150 mA |
150 mA |
150 mA |
| On-state non-repetitive peak current |
23000 A |
23000 A |
23000 A |
23000 A |
| Maximum on-state current |
1200000 A |
1200000 A |
1200000 A |
1200000 A |
| Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
| Minimum operating temperature |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
| Off-state repetitive peak voltage |
2500 V |
2300 V |
2400 V |
2600 V |
| surface mount |
NO |
NO |
NO |
NO |
| Trigger device type |
SCR |
SCR |
SCR |
SCR |