BSW67 datasheet, PDF - EEWORLD Datasheet

BSW67: Description1500mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39; CategoryDiscrete semiconductor The transistor; File Size84KB，3 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BSW67 Overview

1500mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1.5 A
Collector-based maximum capacity	35 pF
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	5 W
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
VCEsat-Max	1 V

	BSW67	BSW68
Description	1500mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39	1500mA, 150V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Is it Rohs certified?	incompatible	incompatible
Maker	STMicroelectronics	STMicroelectronics
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1.5 A	1.5 A
Collector-based maximum capacity	35 pF	35 pF
Collector-emitter maximum voltage	120 V	150 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15
JEDEC-95 code	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power consumption environment	5 W	5 W
Maximum power dissipation(Abs)	0.8 W	13 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz
VCEsat-Max	1 V	1 V

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