BSX45-10LEADFREE datasheet, PDF

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BSX45-10LEADFREE: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size505KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BSX45-10LEADFREE Overview

Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

BSX45-10LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	25 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	0.8 W
Maximum power dissipation(Abs)	6.25 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Maximum off time (toff)	850 ns
Maximum opening time (tons)	200 ns
VCEsat-Max	1 V

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BSX45, -10, -16

BSX46, -10, -16

BSX47, -10

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BSX45 series types

are silicon NPN epitaxial transistors designed for general

purpose amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation (TC=25°C)

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BSX45

BSX46

100

7.0

1.0

1.5

200

6.25

0.8

-65 to +200

219

BSX47

120

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

BSX45

BSX46

SYMBOL

TEST CONDITIONS

MIN MAX

ICBO

VCB=60V

ICBO

VCB=60V, TA=150°C

ICBO

VCB=80V

ICBO

IEBO

VCE(SAT)

VBE(ON)

ton

toff

VCB=80V, TA=150°C

VEB=5.0V

IC=1.0A, IB=100mA

IC=500mA, IB=25mA

VCE=1.0V, IC=100mA

VCE=1.0V, IC=500mA

VCE=1.0V, IC=1.0A

VCE=10V, IC=50mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

IC=100mA, IB1=IB2=5.0mA

VCE=5.0V, IC=100μA, RS=1.0kΩ

f=1.0kHz, BW=200Hz

0.75

1.0

1.5

2.0

200

850

0.75

1.0

1.5

2.0

200

850

BSX47

MIN MAX

0.75

0.9

1.0

1.5

2.0

200

850

UNITS

μA

MHz

3.5 TYP

R1 (24-October 2013)

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Description	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	40 V	60 V	80 V	60 V	40 V	40 V	60 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	25	35	25	35	25	25
JEDEC-95 code	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	MATTE TIN (315)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
Maximum off time (toff)	850 ns	850 ns	850 ns	850 ns	850 ns	850 ns	850 ns	850 ns
Maximum opening time (tons)	200 ns	200 ns	200 ns	200 ns	200 ns	200 ns	200 ns	200 ns
Collector-based maximum capacity	25 pF	20 pF	15 pF	-	25 pF	25 pF	20 pF	15 pF
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-	-65 °C	-65 °C	-65 °C	-65 °C
Maximum power consumption environment	0.8 W	0.8 W	0.8 W	-	0.8 W	0.8 W	0.8 W	0.8 W
Maximum power dissipation(Abs)	6.25 W	6.25 W	6.25 W	-	6.25 W	6.25 W	6.25 W	6.25 W
VCEsat-Max	1 V	1 V	0.9 V	-	1 V	1 V	1 V	0.9 V

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