DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12; BUT12A
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
andbook, halfpage
BUT12; BUT12A
APPLICATIONS
•
Converters
•
Inverters
•
Switching regulators
•
Motor control systems.
handbook, halfpage
2
1
MBB008
3
MBK106
1 2 3
PINNING
PIN
1
2
3
DESCRIPTION
base
collector; connected to
mounting base
emitter
Fig.1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CESM
BUT12
BUT12A
V
CEO
collector-emitter voltage
BUT12
BUT12A
V
CEsat
I
Csat
collector-emitter saturation voltage
collector saturation current
BUT12
BUT12A
I
C
I
CM
P
tot
t
f
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Figs 3 and 4
see Fig. 4
T
mb
≤
25
°C;
see Fig.2
resistive load;
see Figs 12 and 13
6
5
8
20
125
0.8
A
A
A
A
W
µs
see Fig.8
open base
400
450
1.5
V
V
V
PARAMETER
collector-emitter peak voltage
V
BE
= 0
850
1000
V
V
CONDITIONS
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
thermal resistance from junction to mounting base
VALUE
1
UNIT
K/W
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
BUT12
BUT12A
V
CEO
collector-emitter voltage
BUT12
BUT12A
I
Csat
collector saturation current
BUT12
BUT12A
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C;
see Fig.2
see Figs 3 and 4
see Fig. 4
−
−
−
−
−
−
−
−65
−
open base
−
−
PARAMETER
collector-emitter peak voltage
V
BE
= 0
−
−
CONDITIONS
BUT12; BUT12A
MIN.
MAX.
850
1000
400
450
6
5
8
20
4
6
125
+150
150
V
V
V
V
A
A
A
A
A
A
W
UNIT
°C
°C
MGD283
120
handbook, halfpage
Ptot max
(%)
80
handbook, halfpage
10
MGB892
IC
(A)
5
40
BUT12F
BUT12AF
0
0
50
100
Tmb
(
o
C)
150
0
0
400
800
VCE (V) 1200
V
BE
=
−1
to
−5
V; T
c
= 100
°C.
Fig.2 Power derating curve.
Fig.3 Reverse bias SOAR.
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
PARAMETER
CONDITIONS
BUT12; BUT12A
MIN.
400
450
TYP.
−
−
−
−
−
−
−
−
−
18
20
MAX. UNIT
−
−
1.5
1.5
1.5
1.5
1
3
10
35
35
V
V
V
V
V
V
mA
mA
mA
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0; L = 25 mH; see
Figs 6 and 7
BUT12
BUT12A
collector-emitter saturation voltage
BUT12
BUT12A
I
C
= 6 A; I
B
= 1.2 A; see Figs 8 and 10
I
C
= 5 A; I
B
= 1 A; see Figs 8 and 10
I
C
= 6 A; I
B
= 1.2 A; see Fig.8
I
C
= 5 A; I
B
= 1 A; see Fig.8
V
CE
= V
CESmax
; V
BE
= 0; note 1
V
CE
= V
CESmax
; V
BE
= 0; T
j
= 125
°C;
note 1
V
CEsat
−
−
−
−
−
−
−
10
10
V
BEsat
base-emitter saturation voltage
BUT12
BUT12A
I
CES
collector-emitter cut-off current
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 10 mA; see Fig.11
V
CE
= 5 V; I
C
= 1 A; see Fig.11
Switching times resistive load
(see Figs 12 and 13)
t
on
turn-on time
BUT12
BUT12A
t
s
storage time
BUT12
BUT12A
t
f
fall time
BUT12
BUT12A
I
Con
= 6 A; I
Bon
=
−I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
−I
Boff
= 1 A
−
−
−
−
0.8
0.8
µs
µs
I
Con
= 6 A; I
Bon
=
−I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
−I
Boff
= 1 A
−
−
−
−
4
4
µs
µs
I
Con
= 6 A; I
Bon
=
−I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
−I
Boff
= 1 A
−
−
−
−
1
1
µs
µs
Switching times inductive load
(see Figs 14 and 15)
t
s
storage time
BUT12
BUT12A
t
f
fall time
BUT12
BUT12A
Note
1. Measured with a half-sinewave voltage (curve tracer).
I
Con
= 6 A; I
Bon
= 1.2 A; V
CL
= 250 V;
T
c
= 100
°C
I
Con
= 5 A; I
Bon
= 1 A; V
CL
= 300 V;
T
c
= 100
°C
−
−
200
200
300
300
ns
ns
I
Con
= 6 A; I
Bon
= 1.2 A; V
CL
= 250 V;
T
c
= 100
°C
I
Con
= 5 A; I
Bon
= 1 A; V
CL
= 300 V;
T
c
= 100
°C
−
−
1.9
1.9
2.5
2.5
µs
µs
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12; BUT12A
andbook, full pagewidth
10
2
MGB945
IC
(A)
ICM max
δ
= 0.01
tp =
20
µs
10
IC max
(1)
II
50
µs
100
µs
1
200
µs
500
µs
III
I
10
−1
(2)
1 ms
2 ms
5 ms
10 ms
20 ms
DC
BUT12
BUT12A
10
−2
10
10
2
10
3
VCE (V)
10
4
10
−3
400
10
−2
IC
(A)
III
BUT12
BUT12A
IV
1000
VCE (V)
T
mb
< 25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) P
tot max
and P
tot peak max
lines.
(2) Second breakdown limits.
Fig.4 Forward bias SOAR.
1997 Aug 13
4
京公网安备 11010802033920号
EEWORLD
