TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Purpose Power
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | SC-64 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 180 V |
| Maximum drain current (ID) | 1 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2SJ338-Y(2-7B2B) | 2SJ338-O(2-7B2B) | 2SJ338(2-7B2B) | |
|---|---|---|---|
| Description | TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Purpose Power | TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Purpose Power | TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Purpose Power |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Parts packaging code | SC-64 | SC-64 | SC-64 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Shell connection | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 180 V | 180 V | 180 V |
| Maximum drain current (ID) | 1 A | 1 A | 1 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
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