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BYD47-18135

Description
DIODE 0.34 A, 1800 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size169KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYD47-18135 Overview

DIODE 0.34 A, 1800 V, SILICON, SIGNAL DIODE, Signal Diode

BYD47-18135 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.34 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.71 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1800 V
Maximum reverse recovery time0.3 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND

BYD47-18135 Related Products

BYD47-18135 BYD47-16135
Description DIODE 0.34 A, 1800 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 0.34 A, 1600 V, SILICON, SIGNAL DIODE, Signal Diode
Maker NXP NXP
package instruction O-LELF-R2 O-LELF-R2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LELF-R2 O-LELF-R2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 0.34 A 0.34 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Maximum power dissipation 0.71 W 0.71 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1800 V 1600 V
Maximum reverse recovery time 0.3 µs 0.3 µs
surface mount YES YES
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END

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