|
BYD47-18135 |
BYD47-16135 |
| Description |
DIODE 0.34 A, 1800 V, SILICON, SIGNAL DIODE, Signal Diode |
DIODE 0.34 A, 1600 V, SILICON, SIGNAL DIODE, Signal Diode |
| Maker |
NXP |
NXP |
| package instruction |
O-LELF-R2 |
O-LELF-R2 |
| Reach Compliance Code |
unknown |
unknown |
| ECCN code |
EAR99 |
EAR99 |
| Shell connection |
ISOLATED |
ISOLATED |
| Configuration |
SINGLE |
SINGLE |
| Diode component materials |
SILICON |
SILICON |
| Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
| JESD-30 code |
O-LELF-R2 |
O-LELF-R2 |
| Number of components |
1 |
1 |
| Number of terminals |
2 |
2 |
| Maximum operating temperature |
175 °C |
175 °C |
| Minimum operating temperature |
-65 °C |
-65 °C |
| Maximum output current |
0.34 A |
0.34 A |
| Package body material |
GLASS |
GLASS |
| Package shape |
ROUND |
ROUND |
| Package form |
LONG FORM |
LONG FORM |
| Maximum power dissipation |
0.71 W |
0.71 W |
| Certification status |
Not Qualified |
Not Qualified |
| Maximum repetitive peak reverse voltage |
1800 V |
1600 V |
| Maximum reverse recovery time |
0.3 µs |
0.3 µs |
| surface mount |
YES |
YES |
| Terminal form |
WRAP AROUND |
WRAP AROUND |
| Terminal location |
END |
END |