BD941 datasheet, PDF - EEWORLD Datasheet

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BD941: DescriptionPower Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size71KB，2 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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BD941 Overview

Power Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

BD941 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz

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20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon NPN Power Transistor

DESCRIPTION

• DC Current Gain-

: h

FE

= 40(Min)@ l

c

= 150mA

• Complement to Type BD934/936/938/940/942

APPLICATIONS

• Designed for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

BD933/935/937/939/941

2

1-

ABSOLUTE MAXIMUM RATINGS(T

a

=25"C)

SYMBOL

PARAMETER

BD933

BD935

VALUE

45

60

100

120

140

45

60

80

100

120

5

3

7

0.5

30

150

UNIT

w

1

j

. I

1 2 3

j

3

1.BASE

<

2. COLLECTOR

3- EMITTER

TO-220C package

VCBO

Collector-Base Voltage

BD937

BD939

BD941

BD933

BD935

V

-i B —

•*• V -H

*S

tlf'

A"

"

^ert

^>

§

i

Jv v V

11

fl^l

—1500

%

VCEO

Collector-Emitter Voltage

BD937

BD939

BD941

V

_.

T

V

EBO

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation

@ T

C

=25'C

Junction Temperature

Storage Temperature Range

V

A

W

'C

Ic

ICM

IB

PC

Tj

Tstg

c

4

.

mm

WIN

DIM

A

15.70

9.90

B

C

D

F

G

-65-150

°c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal Resistance.Junction to Case

Thermal Resistance.Junction to Ambient

MAX

4.17

70

UNIT

iv,

Rth j-c

Rth j-a

r/w

•c/w

H

J

K

L

Q

ft

S

u

V

MAX

15.90

10.10

4.20

4.40

0.70

0.90

3.40

3.60

4.98

5.1?

2.90

2.70

0.44

0.46

13.20 13.40

1.30

1.10

2.90

2.70

2.50

2.70

1.29

1.31

6.65

6.45

8.66

8.86

Oiinlih/ S

BD941 Related Products

	BD941	BD933	BD935	BD937	BD939
Description	Power Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Maker	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	120 V	45 V	60 V	80 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	25	25	25
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz

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