DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ255; BFQ255A
PNP video transistors
Product specification
Supersedes data November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors
Product specification
PNP video transistors
FEATURES
•
High breakdown voltages
•
Low output capacitance
•
High gain bandwidth
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
•
Buffer/driver in high-resolution
colour graphics monitors.
DESCRIPTION
PNP video transistor in a SOT128B
(TO-202) plastic package.
NPN complements: BFQ235 and
BFQ235A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector
base
page
BFQ255; BFQ255A
1
2
3
MGA323
Fig.1
Simplified outline
(SOT128B; TO-202).
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFQ255
BFQ255A
V
CER
collector-emitter voltage R
BE
= 100
Ω
BFQ255
BFQ255A
I
C
P
tot
h
FE
f
T
collector current (DC)
total power dissipation
DC current gain
transition frequency
BFQ255
BFQ255A
Note
1. T
s
is the temperature at the soldering point of the collector pin.
T
s
≤
100
°C;
note 1
I
C
=
−50
mA; V
CE
=
−10
V; T
amb
= 25
°C
I
C
=
−50
mA; V
CE
=
−10
V; f = 100 MHz;
T
amb
= 25
°C
−
−
−
−
20
1
0.8
−
−
−
−
30
1.3
1.2
−95
−110
−300
3
−
−
−
GHz
GHz
V
V
mA
W
open emitter
−
−
−
−
−100
−115
V
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
PNP video transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFQ255
BFQ255A
V
CEO
collector-emitter voltage
BFQ255
BFQ255A
V
CER
collector-emitter voltage
BFQ255
BFQ255A
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
100
°C;
note 1; see Fig.3
open collector
R
BE
= 100
Ω
open base
CONDITIONS
open emitter
BFQ255; BFQ255A
MIN.
−
−
−
−
−
−
−
−
−
−65
−
MAX.
−100
−115
−65
−95
−95
−110
−3
−300
3
+150
175
V
V
V
V
V
V
V
UNIT
mA
W
°C
°C
CONDITIONS
VALUE
25
UNIT
K/W
thermal resistance from junction to soldering point T
s
≤
100
°C;
note 1
1997 Oct 02
3
Philips Semiconductors
Product specification
PNP video transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
BFQ255
BFQ255A
V
(BR)CEO
collector-emitter breakdown voltage I
C
=
−10
mA; I
B
= 0
BFQ255
BFQ255A
V
(BR)CER
collector-emitter breakdown voltage I
C
=
−10
mA; R
BE
= 100
Ω
BFQ255
BFQ255A
V
(BR)EBO
I
CES
I
CBO
h
FE
C
cb
f
T
emitter-base breakdown voltage
collector-emitter cut-off current
collector-base cut-off current
DC current gain
collector-base capacitance
transition frequency
BFQ255
BFQ255A
I
E
=
−0.1
mA; I
C
= 0
I
B
= 0; V
CE
=
−50
V
I
E
= 0; V
CB
=
−50
V
I
C
=
−50
mA; V
CE
=
−10
V;
T
amb
= 25
°C;
see Fig.4
I
C
= 0; V
CB
=
−10
V; f = 1 MHz;
see Fig.5
PARAMETER
collector-base breakdown voltage
CONDITIONS
I
C
=
−0.1
mA; I
E
= 0
BFQ255; BFQ255A
MIN.
−100
−115
−66
−95
−95
−110
−3
−
−
20
−
TYP.
−
−
−
−
−
−
−
−
−
30
2
MAX. UNIT
−
−
−
−
−
−
−
−100
−20
−
−
pF
V
V
V
V
V
V
V
µA
µA
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz; T
amb
= 25
°C;
see Fig.6 1
0.8
1.3
1.2
−
−
GHz
GHz
−500
handbook, halfpage
IC
(mA)
−400
MEA333
handbook, halfpage
4
MBB888
Ptot
(W)
3
−300
2
−200
−100
1
0
0
−20
−40
−60
−80
VCEO (V)
0
0
50
100
150
Ts (
o
C)
200
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 02
4
Philips Semiconductors
Product specification
PNP video transistors
BFQ255; BFQ255A
50
handbook, halfpage
hFE
40
MEA332
6
handbook, halfpage
Ccb
(pF)
5
MEA331
4
30
3
20
2
10
0
−100
−200
IC (mA)
−300
1
0
−10
−20
−30
−40
VCB (V)
V
CE
=
−10
V; T
amb
= 25
°C.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Collector-base capacitance as a function of
collector-base voltage; typical values.
MEA330
2.0
handbook, halfpage
fT
(GHz)
1.5
BFQ255
1.0
BFQ255A
0.5
0
−50
−100
IC (mA)
−150
V
CE
=
−10
V; f = 100 MHz; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current; typical values.
1997 Oct 02
5
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