BUK9518-30,127 datasheet, PDF - EEWORLD Datasheet

BUK9518-30,127: Description55A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size236KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK9518-30,127 Overview

55A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)	80 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	55 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	220 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

	BUK9518-30,127	BUK9518-30127
Description	55A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE, ESD PROTECTION	LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)	80 mJ	80 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (ID)	55 A	55 A
Maximum drain-source on-resistance	0.018 Ω	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	220 A	220 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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