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BUK481-100A-T

Description
TRANSISTOR 1 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size56KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BUK481-100A-T Overview

TRANSISTOR 1 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK481-100A-T Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)10 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)25 pF
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)40 ns
Maximum opening time (tons)45 ns
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK481-100A
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
V
GS
= 10 V
MAX.
100
1.0
1.5
150
0.80
UNIT
V
A
W
˚C
PINNING - SOT223
PIN
1
2
3
4
gate
drain
source
drain (tab)
DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g
1
2
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
amb
= 25 ˚C
T
amb
= 100 ˚C
T
amb
= 25 ˚C
T
amb
= 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
100
100
30
1
0.6
4
1.5
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-b
R
th j-amb
PARAMETER
From junction to board
1
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.17
MIN.
-
-
TYP.
50
-
MAX.
-
85
UNIT
K/W
K/W
1
Temperature measured 1-3 mm from tab.
January 1998
1
Rev 1.000

BUK481-100A-T Related Products

BUK481-100A-T BUK481-100AT/R
Description TRANSISTOR 1 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 1 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power
Maker NXP NXP
package instruction SMALL OUTLINE, R-PDSO-G4 PLASTIC PACKAGE-4
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 10 mJ 10 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 1 A 1 A
Maximum drain-source on-resistance 0.8 Ω 0.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 25 pF 25 pF
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 4 A 4 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 40 ns 40 ns
Maximum opening time (tons) 45 ns 45 ns
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