PC3H5J00000F Series
PC3H5J00000F
Series
Mini-flat Half Pitch Package,
Darlington Phototransistor Output
Photocoupler
■
Description
PC3H5J00000F Series
contains an IRED optically
coupled to a phototransistor.
It is packaged in a 4-pin Mini-flat, Half pitch type.
Input-output isolation voltage(rms) is 2.5kV.
CTR is MIN. 600% at input current of 1mA.
■
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No.
PC3H5)
2. Approved by VDE, DIN EN60747-5-2
(∗)
(as an
option), file No. 40009162 (as model No.
PC3H5)
3. Package resin : UL flammability grade (94V-0)
(∗)
DIN EN60747-5-2 : successor standard of DIN VDE0884
■
Features
1. 4-pin Mini-flat Half pitch package (Lead pitch :
1.27mm)
2. Double transfer mold package (Ideal for Flow
Soldering)
3. Darlington phototransistor output (CTR : MIN. 600%
at I
F
=1mA, V
CE
=2V)
4. Isolation voltage between input and output (V
iso(rms)
:
2.5kV)
5. RoHS directive compliant
■
Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A01702FEN
Date Jun. 30. 2005
© SHARP Corporation
PC3H5J00000F Series
■
Internal Connection Diagram
1
4
1
2
3
2
3
4
Anode
Cathode
Emitter
Collector
■
Outline Dimensions
VDE option
SHARP mark "S"
Anode mark
1.27
±0.25
1
(Unit : mm)
Date code
4
SHARP mark "S"
Anode mark
1.27
±0.25
1
Date code
4
2.6
±0.3
3 H5
0.4
±0.1
2
3
2.6
±0.3
3H5
4
4.4
±0.2
4.4
±0.2
0.4
±0.1
2
3
VDE
Indenfication mark
5.3
±0.3
(1.7)
0.2
±0.05
0.1
±0.1
2.0
±0.2
Epoxy resin
0.2
±0.05
5.3
±0.3
(1.7)
0.1
±0.1
2.0
±0.2
Epoxy resin
0.5
+0.4
−0.2
7.0
+0.2
−0.7
*( ) : Reference Dimensions
0.5
+0.4
−0.2
7.0
+0.2
−0.7
*( ) : Reference Dimensions
Product mass : approx. 0.05g
Product mass : approx. 0.05g
Plating material : SnCu (Cu : TYP. 2%)
Sheet No.: D2-A01702FEN
2
PC3H5J00000F Series
■
Absolute Maximum Ratings
Parameter
Symbol
I
F
Forward current
*1
Peak forward current
I
FM
Reverse voltage
V
R
P
Power dissipation
Collector-emitter voltage V
CEO
Emitter-collector voltage V
ECO
Collector current
I
C
Collector power dissipation
P
C
Total power dissipation
P
tot
Operating temperature
T
opr
Storage temperature
T
stg
*2
Isolation voltage
V
iso (rms)
*3
Soldering temperature
T
sol
(T
a
=25˚C)
Rating
Unit
50
mA
1
A
6
V
70
mW
V
35
V
6
mA
80
150
mW
170
mW
−30
to
+100
˚C
−40
to
+125
˚C
2.5
kV
260
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute
*3 For 10s
■
Electro-optical Characteristics
Symbol
Parameter
V
F
Forward voltage
Reverse current
I
R
Terminal capacitance
C
t
Collector dark current
I
CEO
Collector-emitter breakdown voltage BV
CEO
Emitter-collector breakdown voltage BV
ECO
Collector current
I
C
Collector-emitter saturation voltage V
CE (sat)
Isolation resistance
R
ISO
Floating capacitance
C
f
Rise time
t
r
Response time
Fall time
t
f
Conditions
I
F
=20mA
V
R
=4V
V=0, f=1kHz
V
CE
=10V,
I
F
=0
I
C
=0.1mA,
I
F
=0
I
E
=10µA,
I
F
=0
I
F
=1mA,
V
CE
=2V
I
F
=1mA,
I
C
=2mA
DC500V, 40 to 60%RH
V=0, f=1MHz
Output
Input
Input
Output
Transfer
charac-
teristics
V
CE
=2V,
I
C
=2mA,
R
L
=100Ω
MIN.
−
−
−
−
35
6
6
−
5×10
10
−
−
−
TYP.
1.2
−
30
−
−
−
16
0.8
1×10
11
0.6
60
53
MAX.
1.4
10
250
1000
−
−
75
1.0
−
1.0
300
250
(T
a
=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
Sheet No.: D2-A01702FEN
4
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