BAV21T50A datasheet, PDF - EEWORLD Datasheet

BAV21T50A: Description0.2A, 200V, SILICON, SIGNAL DIODE, DO-35; CategoryDiscrete semiconductor diode; File Size106KB，4 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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BAV21T50A Overview

0.2A, 200V, SILICON, SIGNAL DIODE, DO-35

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	4 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	0.1 µA
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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