INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA900
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -18V(Min)
·Good
Linearity of h
FE
·Low
Collector Saturation Voltage
·Complement
to Type 2SC1568
APPLICATIONS
·Designed
for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-20
V
V
CEO
Collector-Emitter Voltage
-18
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-1
A
I
CP
Collector Current-Pulse
-2
A
P
C
Collector Power Dissipation
1.2
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA900
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -1mA; I
B
= 0
-18
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -10μA; I
E
= 0
-20
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -10μA; I
C
= 0
-5
V
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
I
C
= -1A; I
B
= -50mA
I
C
= -0.5A; I
B
= -50mA
-0.5
V
Base-Emitter Saturation Voltage
-1.2
V
μA
μA
I
CBO
Collector Cutoff Current
V
CB
= -10V; I
E
= 0
-1
I
CEO
Collector Cutoff Current
V
CE
= -18V; I
B
= 0
-10
h
FE-1
DC Current Gain
I
C
= -0.5A; V
CE
= -2V
90
470
h
FE-2
DC Current Gain
I
C
= -1.5A ; V
CE
= -2V
50
f
T
C
OB
Current-Gain—Bandwidth Product
I
C
= -50mA; V
CE
= -6V
200
MHz
Output Capacitance
I
E
=0; V
CB
= -6V, f
test
= 1MHz
40
pF
h
FE-1
Classifications
Q
90-155
R
130-210
S
180-280
T
250-360
U
330-470
isc Website:www.iscsemi.cn
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