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2SA900U

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size78KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SA900U Overview

Transistor

2SA900U Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA900
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -18V(Min)
·Good
Linearity of h
FE
·Low
Collector Saturation Voltage
·Complement
to Type 2SC1568
APPLICATIONS
·Designed
for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-20
V
V
CEO
Collector-Emitter Voltage
-18
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-1
A
I
CP
Collector Current-Pulse
-2
A
P
C
Collector Power Dissipation
1.2
W
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn

2SA900U Related Products

2SA900U 2SA900S 2SA900R 2SA900Q 2SA900T
Description Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1
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