, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA900
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V
(BR
)CEO=-18V(Min)
• Good Linearity of I>E
• Low Collector Saturation Voltage
• Complement to Type 2SC1568
PIN 1.BMITTER
2.COLLECTOR
3. BASE
TO-126 package
APPLICATIONS
• Designed for audio frequency power amplifier applications.
r*
-B--
~*1
(
t
A
1
;
K ~*
•
f
r
i
'&
Q
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
i
-
T
H
~f
'T
V
:
r
k~j
*-R
,
r
D—
VCBO
Collector-Base Voltage
-20
V
~\ r
t—
T
VCEO
Collector-Emitter Voltage
-18
V
— *"
VEBO
Emitter-Base Voltage
-5
V
q
1 1 ••""»"'
V
• * *
•
M ^ H
^ B
3
mm
WIN
10.70
7.70
2.60
0.66
3.10
4.4&
2 3
Ic
Collector Current-Continuous
-1
A
ICP
Collector Current-Pulse
-2
A
DIM
A
B
C
MAX
10.95
7.90
2.30
0,36
3.30
4.68
2.20
1.55
16,30
3.90
0.60
1.37
PC
Collector Power Dissipation
1.2
W
Tj
Junction Temperature
150
•c
•c
D
F
G
H
J
K
0
R
Tstg
Storage Temperature Range
-55-150
V
2.00
1.35
15.30
3.JO
0.40
1.17
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of soil
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain— Bandwidth Product
Output Capacitance
CONDITIONS
lc=-1mA;l
B
=0
lc=-10u A; I
E
=0
l
E
=-10u A;l
c
=0
lc= -1A; I
B
= -50mA
l
c
= -0.5A; I
B
= -50mA
V
CB
= -20V; I
E
= 0
V
C
E=-18V;I
B
=0
l
c
= -0.5A; V
CE
= -2V
lc=-1.5A;V
CE
=-2V
l
c
= -50mA; V
C
E= -6V
I
E
=0;V
C
B=-6V, f,est=1MHz
90
MIN
2SA900
TYP.
MAX
UNIT
V
V(BR)CEO
-18
V(BR)CBO
-20
V
V(BR)EBO
-5
V
VcE(sat)
-0.5
-1.2
V
VBE(sat)
V
ICBO
-1
MA
ICEO
-10
uA
hpE-1
470
hFE-2
50
fr
COB
200
MHz
40
PF
•
hpE-1 Classifications
Q
90-155
R
130-210
S
180-280
T
250-360
U
330-470