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2SJ384(S)

Description
Small Signal Field-Effect Transistor, 15A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size240KB,8 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SJ384(S) Overview

Small Signal Field-Effect Transistor, 15A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3

2SJ384(S) Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SJ384(S) Related Products

2SJ384(S) 2SJ384(L)
Description Small Signal Field-Effect Transistor, 15A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 Power Field-Effect Transistor, 15A I(D), 60V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 15 A 15 A
Maximum drain current (ID) 15 A 15 A
Maximum drain-source on-resistance 0.01 Ω 0.01 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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