Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA914
DESCRIPTION
·With
TO-126 package
·Complement
to type 2SC1953
·Good
linearity of h
FE
·High
V
CEO
APPLICATIONS
·For
audio frequency power pre-amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
·
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-50
-100
1
150
-55~150
UNIT
V
V
V
mA
mA
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA914
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-0.1mA;I
B
=0
-150
V
V
(BR)EBO
V
CEsat
Emitter-base breakdown voltage
I
E
=-10μA ;I
C
=0
I
C
=-30mA ;I
B
=-3mA
-5
V
Collector-emitter saturation voltage
-1.0
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-100V; I
E
=0
-1
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-1
h
FE
DC current gain
I
C
=-10mA ; V
CE
=-5V
90
450
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
5
pF
f
T
Transition frequency
I
E
=10mA ; V
CB
=-10V
200
MHz
h
FE
Classifications
Q
90-155
R
130-220
S
185-330
T
260-450
2
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