2SJ469TL datasheet, PDF - EEWORLD Datasheet

2SJ469TL: DescriptionPower Field-Effect Transistor, 5A I(D), 30V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SJ469TL Overview

Power Field-Effect Transistor, 5A I(D), 30V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Parameter Name	Attribute value
Objectid	1454193934
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON

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