Transistors
2SA0921
(2SA921)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
■
Features
Unit: mm
5.0
±0.2
5.1
±0.2
4.0
±0.2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
f
T
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
e/
Collector-emitter cutoff current (Base open)
na
nc
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
180 to 360
S
260 to 520
T
360 to 700
Publication date: January 2003
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•
High collector-emitter voltage (Base open) V
CEO
•
Low noise voltage NV
Rating
−120
−120
−5
−20
−50
250
150
Unit
V
V
12.9
±0.5
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
2.3
±0.2
V
mA
mA
°C
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
mW
°C
T
stg
−55
to
+150
Conditions
Min
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
−120
−5
−120
V
sc
on
V
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
−100
−1
700
nA
V
Di
µA
V
CE
=
−5
V, I
C
=
−2
mA
180
V
CE(sat)
NV
I
C
= −20
mA, I
B
= −2
mA
−
0.6
150
ain
V
CB
= −5
V, I
E
=
2 mA, f
=
200 MHz
te
200
MHz
mV
M
V
CE
=
−40
V, I
C
=
−1
mA, G
V
= 80 dB
R
g
= 100 kΩ, Function = FLAT
Note) The part number in the parenthesis shows conventional part number.
SJC00007BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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Consult our sales staff in advance for information on the following applications:
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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