2SJ472-01L datasheet, PDF - EEWORLD Datasheet

2SJ472-01L: DescriptionPower Field-Effect Transistor, 5A I(D), 30V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, SC-64, KPAK-3; CategoryDiscrete semiconductor The transistor; File Size108KB，1 Pages; ManufacturerFuji Electric Co., Ltd.

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2SJ472-01L Overview

Power Field-Effect Transistor, 5A I(D), 30V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, SC-64, KPAK-3

Parameter Name	Attribute value
Parts packaging code	TO-251AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	191.8 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	15 W
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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