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2SJ472-01S

Description
Power Field-Effect Transistor, 5A I(D), 30V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, KPACK-3
CategoryDiscrete semiconductor    The transistor   
File Size335KB,12 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

2SJ472-01S Overview

Power Field-Effect Transistor, 5A I(D), 30V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, KPACK-3

2SJ472-01S Parametric

Parameter NameAttribute value
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power consumption environment15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)70 ns
Maximum opening time (tons)45 ns
Base Number Matches1
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
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