Latch-up Current.................................................... > 200 mA
Operating Range
Range
Industrial
Ambient
Temperature
–40°C to +85°C
V
CC
2.7V to 3.6V
Product Portfolio
Power Dissipation
V
CC
Range (V)
Product
CY62147VLL
V
CC(min.)
V
CC(typ.)
[3]
V
CC(max.)
2.7
3.0
3.6
Speed
(ns)
70
Operating I
CC
, (mA)
Typ.
[3]
7
Maximum
15
2
Standby I
SB2
,
(µA)
Typ.
[3]
Maximum
20
Electrical Characteristics
Over the Operating Range
CY62147V-70
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
V
CC
= 3.6V
I
OH
= –1.0 mA
I
OL
= 2.1 mA
Test Conditions
V
CC
= 2.7V
V
CC
= 2.7V
V
CC
= 3.6V
V
CC
= 2.7V
2.2
–0.5
–1
–1
±1
+1
7
1
Min.
2.4
0.4
V
CC
+
0.5V
0.8
+1
+1
15
2
Typ.
[3]
Max.
Unit
V
V
V
V
µA
µA
mA
mA
V
CC
Operating Supply I
OUT
= 0 mA, f = f
MAX
= 1/t
RC
, CMOS
Current
Levels
I
OUT
= 0 mA, f = 1 MHz, CMOS Levels
Notes:
2. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.
Document #: 38-05050 Rev. *A
Page 2 of 9
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CY62147V MoBL
®
Electrical Characteristics
Over the Operating Range (continued)
CY62147V-70
Parameter
I
SB1
Description
Test Conditions
Min.
Typ.
[3]
2
Max.
20
Unit
µA
Automatic CE
CE > V
CC
– 0.3V, V
IN
> V
CC
– 0.3V or V
IN
Power-down Current— < 0.3V, f = f
MAX
CMOS Inputs
Automatic CE
CE > V
CC
– 0.3V, V
IN
> V
CC
– 0.3V, or V
IN
V
CC
= 3.6V
Power-down Current— < 0.3V, f = 0
CMOS Inputs
I
SB2
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ.)
Max.
6
8
Unit
pF
pF
Thermal Resistance
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
[4]
Thermal Resistance
(Junction to Case)
[4]
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer
printed circuit board
BGA
55
16
TSOPII
60
22
Units
°C/W
°C/W
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
OUTPUT
5 pF
R2
R1
V
CC
Typ
10%
GND
Rise TIme: 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall Time: 1 V/ns
INCLUDING
JIG AND
SCOPE
(a)
(b)
Equivalent to:
THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
TH
(c)
Parameter
R1
R2
R
TH
V
TH
3.0V
1105
1550
645
1.75
Unit
Ω
Ω
Ω
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
t
CDR[4]
t
R[5]
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
V
CC
= 1.0V, CE > V
CC
– 0.3V, V
IN
> V
CC
– 0.3V or V
IN
<
0.3V; No input may exceed V
CC
+ 0.3V
0
70
Conditions
Min.
1.0
1
Typ.
[3]
Max.
3.6
10
Unit
V
µA
ns
ns
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05050 Rev. *A
Page 3 of 9
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CY62147V MoBL
®
Data Retention Waveform
DATA RETENTION MODE
V
CC
V
CC(min.)
t
CDR
V
DR
> 1.0 V
V
CC(min.)
t
R
CE
Switching Characteristics
Over the Operating Range[
6]
70 ns
Parameter
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE[8]
t
HZBE
Write Cycle
[10, 11]
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
BW
t
SD
t
HD
t
HZWE
t
LZWE
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
BHE / BLE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
[7, 9]
WE HIGH to Low-Z
[7]
10
70
60
60
0
0
40
60
30
0
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to
Low-Z
[7, 9]
[9]
Description
Min.
70
Max.
Unit
ns
70
10
70
25
5
20
10
20
0
70
70
5
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
OE HIGH to High-Z
CE LOW to Low-Z
[7]
CE HIGH to High-Z
[7, 9]
CE LOW to Power-up
CE HIGH to Power-down
BHE / BLE LOW to Data Valid
BHE / BLE LOW to Low-Z
BHE / BLE HIGH to High-Z
Notes:
5. Full Device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 10
µs
or stable at V
CC(min.)
>10
µs.
6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to V
CC(typ.)
, and output loading of the
specified I
OL
/I
OH
and 30 pF load capacitance.
7. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
8. If both byte enables are toggled together this value is 10ns
9. t
HZOE
, t
HZCE
, and t
HZWE
are specified with C
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured
±500
mV from steady-state voltage.
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
11. The minimum write cycle time for Write Cycle #3 (WE controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
Document #: 38-05050 Rev. *A
Page 4 of 9
[+] Feedback
CY62147V MoBL
®
Switching Waveforms
Read Cycle No. 1
[12, 13]
t
RC
ADDRESS
t
OHA
DATA OUT
PREVIOUS DATA VALID
t
AA
DATA VALID
Read Cycle No. 2
[13, 14]
CE
t
ACE
OE
t
DOE
BHE/BLE
t
LZOE
t
HZBE
t
DBE
t
LZBE
DATA OUT
HIGH IMPEDANCE
t
LZCE
V
CC
SUPPLY
CURRENT
t
PU
50%
[10, 15, 16]
t
RC
t
PD
t
HZCE
t
HZOE
HIGH
IMPEDANCE
DATA VALID
I
CC
50%
I
SB
Write Cycle No. 1 (WE Controlled)
t
WC
ADDRESS
CE
t
AW
WE
t
SA
t
PWE
t
HA
BHE/BLE
t
BW
OE
t
SD
DATA I/O
NOTE 17
t
HZOE
Notes:
12. Device is continuously selected. OE, CE = V
IL
.
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
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